MRC | Criteria | Characteristic |
---|---|---|
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
ADAT | BODY WIDTH | 0.530 INCHES MINIMUM AND 0.550 INCHES MAXIMUM |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AFGA | OPERATING TEMP RANGE | -0.0/+70.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
ADAQ | BODY LENGTH | 1.230 INCHES MINIMUM AND 1.260 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -0.0 TO 70.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZER | MEMORY DEVICE TYPE | ROM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CRHL | (NON-CORE DATA) BIT QUANTITY | 32768 |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND HIGH PERFORMANCE AND STATIC OPERATION AND ASYNCHRONOUS |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 4096 |
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