MRC | Criteria | Characteristic |
---|---|---|
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
ADAQ | BODY LENGTH | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 2048 |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
ADAT | BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
CRHL | (NON-CORE DATA) BIT QUANTITY | 16384 |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CZER | MEMORY DEVICE TYPE | EPROM |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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