MRC | Criteria | Characteristic |
---|---|---|
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
TEST | TEST DATA DOCUMENT | 03640-6091416 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
ADAQ | BODY LENGTH | 0.890 INCHES MAXIMUM |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
ADAT | BODY WIDTH | 0.320 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
CRHL | (NON-CORE DATA) BIT QUANTITY | 1024 |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND BURN IN |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
TEST | TEST DATA DOCUMENT | 03640-6091416 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
ADAU | BODY HEIGHT | 0.125 INCHES MAXIMUM |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 256 |
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