Purchase Online 1274-262-3 Part by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-079-7851

Part Number : 1274-262-3

Alternate P/N : 12742623

Manufacturer: Bae Systems Information And Electronic Systems Integration I

Item Name : Microcircuit Memory

CAGE Code : 72314

FSC : 5962 Microcircuits Electronic

Searching for a quote on NSN part 1274-262-3 of Microcircuit Memory? If so, please fill up the requirement form provided here. The national stock number (NSN) is 5962010797851 under FSC 5962 Microcircuits Electronic of 1274-262-3, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. Please provide with as much as detail possible, this information will help us provide you the quote for your part 1274-262-3. We will get back to you in 15 minutes or less!

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A national stock number (NSN) part is differentiated by a specific number. This number indicates procurement, stocking, and storage of this part through the federal supply system. Part number 1274-262-3 possess the Federal Supply Group. This part and other NSN parts are very necessary part of the defense and military supply chain.

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NSN Information for Part Number 1274-262-3 with NSN 5962-01-079-7851, 5962010797851

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-079-7851 Item Description: Microcircuit Memory	5962	010797851	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1274-262-3	5	2	3

Characteristics Data of NSN 5962-01-079-7851, 5962010797851

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 230 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 580 INCHES MINIMUM AND 0 620 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 180 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 85 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ERASABLE AND ULTRAVIOLET ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM DELAY
MEMORY	CZER	MEMORY DEVICE TYPEPROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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