NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-233-3489 Item Description: Microcircuit Memory | 5962 | 012333489 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Ow6264cc3-15 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAU | BODY HEIGHT | 0.045 INCHES NOMINAL |
ADAT | BODY WIDTH | 0.460 INCHES MAXIMUM |
ADAQ | BODY LENGTH | 0.560 INCHES MAXIMUM |
CQZP | INPUT CIRCUIT PATTERN | 25 INPUT |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CZER | MEMORY DEVICE TYPE | RAM |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
ADAQ | BODY LENGTH | 0.560 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
ADAT | BODY WIDTH | 0.460 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.045 INCHES NOMINAL |
AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQZP | INPUT CIRCUIT PATTERN | 25 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
AEHX | MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
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