MRC | Criteria | Characteristic |
---|---|---|
CSSL | DESIGN FUNCTION AND QUANTITY | 3 GATE, NAND |
CQZP | INPUT CIRCUIT PATTERN | TRIPLE 3 INPUT |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
TEST | TEST DATA DOCUMENT | 51215-VE477-5052 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
ADAQ | BODY LENGTH | 0.785 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 18.5 VOLTS MAXIMUM POWER SOURCE |
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